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SGP15N120
Fast IGBT in NPT-technology
* 40% lower Eoff compared to previous generation * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter - SMPS * NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
SGP15N120 SGW15N120
C
G
E
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC)
* Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP15N120 SGB15N120 SGW15N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 15A, VCC = 50V, RGE = 25, start at Tj = 25C Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 C
1)
VCE 1200V
IC 15A
Eoff 1.5mJ
Tj 150C
Package TO-220AB TO-263AB(D2PAK) TO-247AC
Ordering Code Q67040-S4274 Q67040-S4275 Q67040-S4276
Symbol VCE IC
Value 1200 30 15
Unit V A
ICpul s VGE EAS tSC Ptot
52 52 20 85 10 198 V mJ s W
VGE = 15V, 100V VCC 1200V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
Power Semiconductors
SGP15N120
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB
1)
SGP15N120 SGW15N120
Max. Value Unit
Symbol
Conditions
RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB(D2PAK)
0.63 62 40 40
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 10 0 0 A VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 60 0 A , V C E = V G E V C E =1200V,V G E =0V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 1200 typ. max. -
Unit
V
2.5 3 -
3.1 3.7 4 11
3.6 4.3 5 A 200 800 100 1500 120 80 175 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E =0V,V G E =20V V C E = 20 V , I C = 15 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =1 5 A V G E = 15 V T O - 22 0A B TO-247AC V G E = 15 V ,t S C 5 s 10 0 V V C C 12 0 0 V, T j 15 0 C
-
1250 100 65 130 7 13 145
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
2
Power Semiconductors
2
Jul-02
SGP15N120
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 80 0 V, I C = 1 5 A, V G E = 15 V /0 V , R G = 33 , 1) L =1 8 0n H, 1) C = 4 0p F Energy losses include "tail" and diode reverse recovery. Symbol Conditions
SGP15N120 SGW15N120
Value min. typ. 18 23 580 22 1.1 0.8 1.9 max. 24 30 750 29 1.5 1.1 2.6 mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 80 0 V, I C = 15 A , V G E = 15 V /0 V , R G = 33 , 1) L =1 8 0n H, 1) C = 4 0p F Energy losses include "tail" and diode reverse recovery. 38 30 652 31 1.9 1.5 3.4 46 36 780 37 2.3 2.0 4.3 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E.
Power Semiconductors
3
Jul-02
SGP15N120
70A
SGP15N120 SGW15N120
tp=2s 15s
Ic
60A 50A 40A 30A 20A 10A 0A 10Hz TC=110C
100A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
50s
TC=80C
200s
1A
1ms
Ic
DC 0.1A
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 33)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
35A 200W 30A 175W 150W 125W 100W 75W 50W 25W 0W 25C 25A 20A 15A 10A 5A 0A 25C
50C
75C
100C
125C
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
4
Jul-02
SGP15N120
50A 50A
SGP15N120 SGW15N120
40A
40A
IC, COLLECTOR CURRENT
15V 30A 13V 11V 20A 9V 7V 10A
IC, COLLECTOR CURRENT
V G E =17V
V G E =17V 15V 30A 13V 11V 20A 9V 7V 10A
0A 0V
1V
2V
3V
4V
5V
6V
7V
0A 0V
1V
2V
3V
4V
5V
6V
7V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
50A
6V
40A
5V
IC=30A
IC, COLLECTOR CURRENT
4V IC=15A 3V IC=7.5A 2V
30A TJ=+150C 20A TJ=+25C TJ=-40C 10A
1V
0A 3V
5V
7V
9V
11V
0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Jul-02
SGP15N120
SGP15N120 SGW15N120
1000ns td(off)
1000ns
td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
100ns td(on) tf
tf
td(on)
tr 10ns 0A 10A 20A 30A 40A 10ns 0
tr
25
50
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 3 3 , dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 15A, dynamic test circuit in Fig.E )
1000ns
6V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
td(off)
5V max.
t, SWITCHING TIMES
4V
typ. 3V min. 2V
100ns
td(on) tr tf 10ns -50C
1V
0C
50C
100C
150C
0V -50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 15A, RG = 3 3 , dynamic test circuit in Fig.E )
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
Power Semiconductors
6
Jul-02
SGP15N120
14mJ
*) Eon and Ets include losses due to diode recovery.
SGP15N120 SGW15N120
5mJ
*) Eon and Ets include losses due to diode recovery.
12mJ
E, SWITCHING ENERGY LOSSES
10mJ 8mJ Eon* 6mJ 4mJ 2mJ 0mJ 0A
E, SWITCHING ENERGY LOSSES
Ets*
Ets* 4mJ
3mJ Eon* 2mJ Eoff
Eoff
1mJ
10A
20A
30A
40A
50A
0mJ 0
25
50
75
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 3 3 , dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 15A, dynamic test circuit in Fig.E )
4mJ
*) Eon and Ets include losses due to diode recovery.
Ets*
D=0.5
ZthJC, TRANSIENT THERMAL IMPEDANCE
E, SWITCHING ENERGY LOSSES
3mJ
0.2 10 K/W
-1
0.1 0.05 0.02
R,(K/W) 0.09751 0.29508 0.13241 0.10485
R1
2mJ
Eon*
10 K/W 0.01
-2
Eoff 1mJ
, (s) 0.67774 0.11191 0.00656 0.00069
R2
10 K/W 1s
-3
single pulse 10s 100s
0mJ -50C
C 1 = 1 / R 1 C 2 = 2 /R 2
0C
50C
100C
150C
1ms
10ms 100ms
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 15A, RG = 3 3 , dynamic test circuit in Fig.E )
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
Power Semiconductors
7
Jul-02
SGP15N120
20V
SGP15N120 SGW15N120
Ciss 1nF
VGE, GATE-EMITTER VOLTAGE
15V
UCE=960V 10V
5V 100pF Coss Crss 50nC 100nC 150nC 0V 10V 20V 30V
0V 0nC
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 15A)
C, CAPACITANCE VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
300A 250A 200A 150A 100A 50A 15V 0A 10V
30s
tsc, SHORT CIRCUIT WITHSTAND TIME
20s
10s
0s 10V
11V
12V
13V
14V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100VVCE 1200V, TC = 25C, Tj 150C)
Power Semiconductors
8
Jul-02
SGP15N120
TO-220AB
symbol
SGP15N120 SGW15N120
dimensions
[mm] min max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min
[inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
A B C D E F G H K L M N P T
9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
TO-263AB (D2Pak)
symbol
dimensions
[mm] min max 10.20 1.30 1.60 1.07 min
[inch] max 0.4016 0.0512 0.0630 0.0421
A B C D E F G H K L M N P Q R S T U V W X Y Z
9.80 0.70 1.00 1.03
0.3858 0.0276 0.0394 0.0406
2.54 typ. 0.65 0.85
0.1 typ. 0.0256 0.0335
5.08 typ. 4.30 1.17 9.05 2.30 4.50 1.37 9.45 2.50
0.2 typ. 0.1693 0.0461 0.3563 0.0906 0.1772 0.0539 0.3720 0.0984
15 typ. 0.00 4.20 2.40 0.40 10.80 1.15 6.23 4.60 9.40 16.15 0.20 5.20 3.00 0.60
0.5906 typ. 0.0000 0.1654 0.0945 0.0157 0.0079 0.2047 0.1181 0.0236
8 max
8 max
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
Power Semiconductors
9
Jul-02
SGP15N120
SGP15N120 SGW15N120
dimensions
TO-247AC
symbol
[mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 min
[inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252
A B C D E F G H K L M N
P
4.78 2.29 1.78 1.09 1.73 2.67
0.1882 0.0902 0.0701 0.0429 0.0681 0.1051
0.76 max 20.80 15.65 5.21 19.81 3.560 21.16 16.15 5.72 20.68 4.930
0.0299 max 0.8189 0.6161 0.2051 0.7799 0.1402 0.8331 0.6358 0.2252 0.8142 0.1941
3.61 6.12 6.22
0.1421 0.2409 0.2449
Q
Power Semiconductors
10
Jul-02
SGP15N120
i,v
SGP15N120 SGW15N120
diF /dt tr r =tS +tF Qr r =QS +QF tr r
IF
tS QS
tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
2
r2
r1
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF.
Power Semiconductors
11
Jul-02
SGP15N120
SGP15N120 SGW15N120
Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
12
Jul-02

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